GE Global Research will set up a power electronics packaging facility on the campus of SUNY Polytechnic Institute’s Colleges of Nanoscale Science and Engineering in the town of Utica, New York, US.

The proposed facility, which serves as the anchor tenant of the Computer Chip Commercialization Center (QUAD C) at the institute, will create 850 jobs in the Mohawk Valley over the next ten years.

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It will employ GE’s silicon carbide technology to manufacture power devices that connect the circuits, provide power, and discharge heat to keep the chips functional.

"We are creating a silicon carbide corridor that will be the epicenter of the next revolution in power."

GE chief technology officer Mark Little said: "Together with New York State and SUNY Polytechnic Institute in Albany, and now Utica, we are creating a silicon carbide corridor that will be the epicenter of the next revolution in power.

"In Utica, it will expand the focus from computer chip commercialisation to creating the first US-based power electronics manufacturing centre with GE’s silicon carbide technology."

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The packaging facility is said to result in the commercialisation of power electronics applications for defence, super-computing, tablets, cell phones and others.

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This investment forms part of Nano Utica initiative, a $1.5bn economic development plan for Mohawk Valley through a nanotechnology-driven ecosystem. It includes the Quad C and the Marcy Nanocenter, and is managed by SUNY Poly.

Nano Utica will also get a $2bn investment from Austrian company AMS, which will build a wafer fabrication facility at the Marcy Nanocenter, creating close to 1,000 jobs.