Fraunhofer IVV develops ultra-barrier film using atomic layer deposition mechanism

8 March 2016 (Last Updated March 8th, 2016 18:30)

Fraunhofer Institute for Process Engineering and Packaging IVV (Fraunhofer IVV) has developed an ultra-barrier film using atomic layer deposition.

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Fraunhofer Institute for Process Engineering and Packaging IVV (Fraunhofer IVV) has developed an ultra-barrier film using atomic layer deposition.

The films, which can be used to pack organic electronics, will be presented at the International LOPEC Fair in Munich that will be from 6-7 April.

A new plant is under construction at the institute to manufacture coated films using an atomic layer deposition mechanism. This will allow the institute to lower the permeability of films and deliver new film products to the industry.

The atomic layer deposition (ALD) mechanism helps to reduce the permeability to water vapour and oxygen. The ALD method is suitable for roll-to-roll processes and bolsters high production efficiency.

Its processing speed is almost equivalent to vacuum processes used for developing the highest barrier films. This new mechanism will be used for publicly funded R&D projects to offer customised solutions in the area of process and material development.

Fraunhofer IVV claimed the ALD technology and its expertise in the areas of high barrier films will improve the quality of barrier films required for OLED encapsulation.


Image: High-barrier films developed at the Fraunhofer IVV. Photo: courtesy of Fraunhofer IVV.