South Korean multinational electronics company Samsung Electronics has developed a 12-layer 3D Through Silicon Via (TSV) chip packaging technology.
The packaging innovation will involve vertically interconnecting 12 DRAM chips through a three-dimensional configuration of more than 60,000 TSV holes.
The new technology will offer identical capability with the same thickness (720µm) as the current eight-layer high-bandwidth memory-2 (HBM2) products.
The 3D-TSV technology will enable the mass production of high-performance chips.
Samsung Electronics test and system package executive vice-president Hong-Joo Baek said: “Packaging technology that secures all of the intricacies of ultra-performance memory is becoming tremendously important, with the wide variety of new-age applications such as artificial intelligence (AI) and high-power computing (HPC).
“As Moore’s law scaling reaches its limit, the role of 3D-TSV technology is expected to become even more critical. We want to be at the forefront of this state-of-the-art chip packaging technology.”
How well do you really know your competitors?
Access the most comprehensive Company Profiles on the market, powered by GlobalData. Save hours of research. Gain competitive edge.
Your download email will arrive shortly
Not ready to buy yet? Download a free sample
We are confident about the unique quality of our Company Profiles. However, we want you to make the most beneficial decision for your business, so we offer a free sample that you can download by submitting the below formBy GlobalData
The 3D packaging technology will allow customers to release high-performance products with increased capacity, using the existing system configuration designs.
The new system has significantly improved, comparing to the existing wire-bonding technology since it reduces data transmission time between chips.
This increases speed and reduces power consumption.
Samsung noted that the 12-layer 3D-TSV technology will offer increased DRAM performance for high-speed and data-intensive applications.
The technology will enable the company to mass-produce 24GB high-bandwidth memory.
The company expects to meet the growing demand for high-capacity HBM solutions.